英语语法分析

The growth techniques, the barrier states and the interfaces for rare earth silicides were thoroughly described.

阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性。

The structure of synthetic silicides has been investigated with the analysis of channeled low Angle emergence and TEM.

用掠角沟道技术和透射电子显微镜分析了这种硅化物的结构。

The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.

因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。